A High-Speed Fully-Integrated POF Receiver With Large-Area Photo Detectors in 65 nm CMOS

被引:31
|
作者
Dong, Yunzhi [1 ]
Martin, Kenneth W. [1 ,2 ]
机构
[1] Univ Toronto, Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
[2] Granite SemiCom, Toronto, ON M5V 3B1, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
CMOS; CTLE; current buffer; EQ; equalizer; fiber-optic; monolithic; OEIC; optical receiver; PD; photo detector; plastic optical fiber; POF; super-Gm TIA; TIA; transimpedance amplifier; TRANSIMPEDANCE AMPLIFIER; OPTICAL RECEIVERS; STANDARD CMOS; TECHNOLOGY; EQUALIZER;
D O I
10.1109/JSSC.2012.2200529
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the design of a multi-gigabit fiber-optic receiver with integrated large-area photo detectors for plastic optical fiber applications. An integrated 250 mu m diameter non-SML NW/P-sub photo detector is adopted to allow efficient light coupling. The theory of applying a fully-differential pre-amplifier with a single-ended photo current is also examined and a super-Gm transimpedance amplifier has been proposed to drive a C-PD of 14 pF to multi-gigahertz frequency. Both differential and common-mode operations of the proposed super-Gm transimpedance amplifier have been analyzed and a differential noise analysis is performed. A digitally-controlled linear equalizer is proposed to produce a slow-rising-slope frequency response to compensate for the photo detector up to 3 GHz. The proposed POF receiver consists of an illuminated signal photo detector, a shielded dummy photo detector, a super-Gm transimpedance amplifier, a variable-gain amplifier, a linear equalizer, a post amplifier, and an output driver. A test chip is fabricated in TSMC's 65 nm low-power CMOS process, and it consumes 50 mW of DC power (excluding the output driver) from a single 1.2 V supply. A bit-error rate of less than 10(-12) has been measured at a data rate of 3.125 Gbps with a 670 nm VCSEL-based electro-optical transmitter.
引用
收藏
页码:2080 / 2092
页数:13
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