MEMS Pressure Sensor Based on Piezoresistive Effect of MoS2 Film

被引：0

作者：

Pang, Xing ^{[1
]}

Zhang, Qi ^{[1
]}

Liang, Xiaoya ^{[1
]}

Zhao, Yulong ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, State Key Lab Mfg Syst Engn, Xian, Peoples R China

来源：

2023 IEEE SENSORS | 2023年

基金：

中国国家自然科学基金;

关键词：

MoS2; MEMS; Piezoresistive; Sensor; LAYER MOS2;

D O I：

10.1109/SENSORS56945.2023.10324905

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

Molybdenum disulfide (MoS2) has excellent electrical and mechanical properties and can be used as sensors. 2D MoS2 is commonly used in sensors and is poorly compatible with MEMS. This paper found that the deposited vertical nanosheets of layered disulfide clamps have excellent piezoresistive properties, which can be prepared in large areas. Its piezoresistive mechanism is attributed to the fact that the tension or compression of the substrate with the stress of the substrate causes an increase or decrease in the spacing of the MoS2 nanosheets between the layers, which results in a change in the resistance of the nanosheets between the layers. The piezoresistive factor of the MoS2 film was about 3 similar to 5. The MEMS pressure sensor based on novel MoS2 nanosheets was developed. The sensor showed a nonlinear error of 3.11%FS, a repeatability error of 1.75%FS, a hysteresis error of 0.74%FS, and basic accuracy of 3.64%FS.

引用

页数：4

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