Piezoresistive MEMS pressure sensor and packaging for harsh oceanic environment

被引:16
|
作者
Mohan, A [1 ]
Malshe, AP [1 ]
Aravamudhan, S [1 ]
Bhansali, S [1 ]
机构
[1] Univ Arkansas, Fayetteville, AR 72701 USA
关键词
D O I
10.1109/ECTC.2004.1319452
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a fabrication and packaging approach for piezoresistive micro electro mechanical (MEMS) pressure sensor designed to operate up to a depth of hundreds of meters under harsh seawater conditions. The pressure values at such depths would typically be in the range of 3000 psi and the, temperature conditions would vary from as low as -5(0)C to 60(0)C. The sensor essentially consists of an array of silicon diaphragm 20-60 mum in thickness with selective regions diffused with boron (p-type) that act as piezoresistors. Packaging solution involves a wafer-level and chip scale interconnection approach taking into consideration appropriate material selection for harsh oceanic environment. The packaged pressure sensor is tested in a simulated harsh oceanic environment. Functional tests are performed in a custom-built pressure chamber, where the deep-sea water conditions were simulated (approximately depth of 1000m). The tests demonstrated excellent mechanical integrity of the packaged device.
引用
收藏
页码:948 / 950
页数:3
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