Sensitivity Optimization of MEMS Based Piezoresistive Pressure Sensor for Harsh Environment

Silicon carbide piezoresistive pressure sensor is more suitable for harsh environment due to its wide bandgap, corrosion tolerance, excellent chemical inertness, high Young’s modulus and high carrier mobility. In this paper, a square diaphragm with X-shaped piezo-resistor located on high stress region of the membrane has been analysed. The simulation study has been done with different materials like silicon, silicon carbide, and polysilicon using device simulation software. Various device characteristics of pressure sensors are measured and compared for different parameter variations to get optimum performance. The results show that for introductory parameters, sensitivity with silicon carbide is 1.358 times to that of silicon. The work presented in this paper motivates researchers for alternate choice of semiconducting materials for piezoresistors and diaphragm to get optimum device performance.