Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

被引：2
|
作者：
Zhou, Heng [1 ]
Lv, Yuanjie [2 ]
Liu, Chao [1 ]
Yang, Ming [3 ]
Lin, Zhaojun [1 ]
Liu, Yang [1 ]
Wang, Mingyan [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Beijing Orient Inst Measurement & Test, Beijing 100094, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2024年 / 212卷
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN HFETs; Split; -gate; Polarization Coulomb field scattering; Fringe electric field effect; SCATTERING; HEMTS;
D O I：
10.1016/j.sse.2023.108833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we fabricated two similar split-gate AlGaN/GaN heterostructure field-effect transistors (SG AlGaN/ GaN HFETs). However, minor variations in structural design resulted in substantial differences in the current-voltage characteristics. The mechanism of current modulation in the open region of the HFET can be explained by the fringe electric field (FEF) effect and the polarization Coulomb field (PCF) scattering for the applied biased split-gate. In particular, the effects of FEF and PCF scattering on the two-dimensional electron gas in the open region were analyzed separately when only the open region was on. Experimental results and TCAD simulation reveal the role of PCF scattering in SG AlGaN/GaN HFETs and provide evidence for the universality of PCF scattering in electronic devices with the AlGaN/GaN heterostructure. This study is meaningful for the structural optimization and electrical performance enhancement of SG AlGaN/GaN HFETs.
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页数：6
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