Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer

被引：0
|
作者：
A. Yu. Pavlov
K. N. Tomosh
V. Yu. Pavlov
D. N. Slapovskiy
A. V. Klekovkin
I. A. Ivchenko
机构：
[1] Mokerov Institute of Ultra High Frequency Semiconductor Electronics,
[2] Russian Academy of Sciences,undefined
来源：
Nanobiotechnology Reports | 2022年 / 17卷
关键词：
field-effect transistor; heterostructure; two-dimensional electron gas; barrier layer; plasma-chemical etching; gate recessing; gallium nitride;
D O I：
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中图分类号：
学科分类号：
摘要：
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页码：S45 / S49
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