Field-Effect Transistors with High Electron Mobility on an AlGaN/GaN Heterostructure with Gate Recessing into the Barrier Layer

被引：0
|
作者：
A. Yu. Pavlov
K. N. Tomosh
V. Yu. Pavlov
D. N. Slapovskiy
A. V. Klekovkin
I. A. Ivchenko
机构：
[1] Mokerov Institute of Ultra High Frequency Semiconductor Electronics,
[2] Russian Academy of Sciences,undefined
来源：
Nanobiotechnology Reports | 2022年 / 17卷
关键词：
field-effect transistor; heterostructure; two-dimensional electron gas; barrier layer; plasma-chemical etching; gate recessing; gallium nitride;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：S45 / S49
相关论文
共 50 条
  • [41] Variation of Dominant Degradation Mechanism in AlGaN Barrier Layer With Different Voltage Stress on the Gate of AlGaN/GaN High Electron Mobility Transistors
    Shi, Lei
    Feng, Shiwei
    Zhang, Yamin
    Shi, Bangbing
    Liu, Kun
    IEEE ELECTRON DEVICE LETTERS, 2015, 36 (04) : 321 - 323
  • [42] Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
    于英霞
    林兆军
    栾崇彪
    王玉堂
    陈弘
    王占国
    Chinese Physics B, 2013, (06) : 534 - 539
  • [43] Electron mobility in the linear region of an AlGaN/AlN/GaN heterostructure field-effect transistor
    Yu Ying-Xia
    Lin Zhao-Jun
    Luan Chong-Biao
    Wang Yu-Tang
    Chen Hong
    Wang Zhan-Guo
    CHINESE PHYSICS B, 2013, 22 (06)
  • [44] Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors
    Mitrofanov, O
    Manfra, M
    SUPERLATTICES AND MICROSTRUCTURES, 2003, 34 (1-2) : 33 - 53
  • [45] Refractive index changes in AlGaN/GaN heterostructure field-effect transistors
    Saidi, I.
    Bouzaiene, L.
    Mejri, H.
    Maaref, H.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2008, 28 (5-6): : 831 - 834
  • [46] High-performance AlGaN/GaN lateral field-effect rectifiers compatible with high electron mobility transistors
    Chen, Wanjun
    Wong, King-Yuen
    Huang, Wei
    Chen, Kevin J.
    APPLIED PHYSICS LETTERS, 2008, 92 (25)
  • [47] Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
    Peng Cui
    Jianghui Mo
    Chen Fu
    Yuanjie Lv
    Huan Liu
    Aijie Cheng
    Chongbiao Luan
    Yang Zhou
    Gang Dai
    Zhaojun Lin
    Scientific Reports, 8
  • [48] Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
    Cui, Peng
    Mo, Jianghui
    Fu, Chen
    Lv, Yuanjie
    Liu, Huan
    Cheng, Aijie
    Luan, Chongbiao
    Zhou, Yang
    Dai, Gang
    Lin, Zhaojun
    SCIENTIFIC REPORTS, 2018, 8
  • [49] High Off-state Breakdown Voltage 60-nm-Long-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with AlGaN Back-Barrier
    Onojima, Norio
    Hirose, Nobumitsu
    Mimura, Takashi
    Matsui, Toshiaki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 0945021 - 0945023
  • [50] Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors
    Liuan Li
    Ryosuke Nakamura
    Qingpeng Wang
    Ying Jiang
    Jin-Ping Ao
    Nanoscale Research Letters, 9
12345