Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistors

被引：2
|
作者：
Zhou, Heng [1 ]
Lv, Yuanjie [2 ]
Liu, Chao [1 ]
Yang, Ming [3 ]
Lin, Zhaojun [1 ]
Liu, Yang [1 ]
Wang, Mingyan [1 ]
机构：
[1] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250101, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit AS, Shijiazhuang 050051, Peoples R China
[3] Beijing Orient Inst Measurement & Test, Beijing 100094, Peoples R China
来源：
SOLID-STATE ELECTRONICS | 2024年 / 212卷
基金：
中国国家自然科学基金;
关键词：
AlGaN/GaN HFETs; Split; -gate; Polarization Coulomb field scattering; Fringe electric field effect; SCATTERING; HEMTS;
D O I：
10.1016/j.sse.2023.108833
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, we fabricated two similar split-gate AlGaN/GaN heterostructure field-effect transistors (SG AlGaN/ GaN HFETs). However, minor variations in structural design resulted in substantial differences in the current-voltage characteristics. The mechanism of current modulation in the open region of the HFET can be explained by the fringe electric field (FEF) effect and the polarization Coulomb field (PCF) scattering for the applied biased split-gate. In particular, the effects of FEF and PCF scattering on the two-dimensional electron gas in the open region were analyzed separately when only the open region was on. Experimental results and TCAD simulation reveal the role of PCF scattering in SG AlGaN/GaN HFETs and provide evidence for the universality of PCF scattering in electronic devices with the AlGaN/GaN heterostructure. This study is meaningful for the structural optimization and electrical performance enhancement of SG AlGaN/GaN HFETs.
引用
收藏
页数：6
相关论文
共 50 条
  • [41] Temperature dependence of normally off mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate
    Sugiyama, Takayuki
    Iida, Daisuke
    Iwaya, Motoaki
    Kamiyama, Satoshi
    Amano, Hiroshi
    Akasaki, Isamu
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10): : 2419 - 2422
  • [42] Split-Gate Organic Field-Effect Transistors for High-Speed Operation
    Uemura, T.
    Matsumoto, T.
    Miyake, K.
    Uno, M.
    Ohnishi, S.
    Kato, T.
    Katayama, M.
    Shinamura, S.
    Hamada, M.
    Kang, M. -J.
    Takimiya, K.
    Mitsui, C.
    Okamoto, T.
    Takeya, J.
    ADVANCED MATERIALS, 2014, 26 (19) : 2983 - 2988
  • [43] Study on the frequency characteristics of split-gate AlGaN/GaN HFETs
    Zhou, Heng
    Lv, Yuanjie
    Liu, Yang
    Wang, Mingyan
    Cui, Peng
    Lin, Zhaojun
    MODERN PHYSICS LETTERS B, 2024, 38 (12):
  • [44] GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
    Khan, MA
    Yang, JW
    Knap, W
    Frayssinet, E
    Hu, X
    Simin, G
    Prystawko, P
    Leszczynski, M
    Grzegory, I
    Porowski, S
    Gaska, R
    Shur, MS
    Beaumont, B
    Teisseire, M
    Neu, G
    APPLIED PHYSICS LETTERS, 2000, 76 (25) : 3807 - 3809
  • [45] DC characteristics of AlGaN/GaN heterostructure field-effect transistors on freestanding GaN substrates
    Irokawa, Y
    Luo, B
    Ren, F
    Pan, CC
    Chen, GT
    Chyi, JI
    Park, SS
    Park, YJ
    Pearton, SJ
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (01) : G8 - G10
  • [46] Effects of SiN passivation by catalytic chemical vapor deposition on electrical properties of AlGaN/GaN heterostructure field-effect transistors
    Higashiwaki, Masataka
    Onojima, Norio
    Matsui, Toshiaki
    Mimura, Takashi
    JOURNAL OF APPLIED PHYSICS, 2006, 100 (03)
  • [47] GaN-AlGaN heterostructure field-effect transistors over bulk GaN substrates
    2000, American Institute of Physics Inc. (76)
  • [48] AlGaN/GaN heterostructure field effect transistors
    Maeda, N.
    Saitoh, T.
    Tsubaki, K.
    NTT R and D, 2001, 50 (01): : 8 - 17
  • [49] Effects of rapid thermal annealing on the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ti/Al/Ni/Au gate electrodes
    Zhao, Jingtao
    Lin, Zhaojun
    Luan, Chongbiao
    Zhou, Yang
    Yang, Ming
    Lv, Yuanjie
    Feng, Zhihong
    APPLIED PHYSICS LETTERS, 2014, 105 (08)
  • [50] Effects of photowashing treatment on electrical properties of an AlGaN/GaN heterostructure field-effect transistor
    Choi, KJ
    Jeon, CM
    Jang, HW
    Lee, JL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1574 - 1577
12345