Influence of O2 Flow Rate on the Properties of Ga2O3 Growth by RF Magnetron Sputtering

被引：3
|
作者：
Li, Dengyue [1 ]
Sun, Hehui [1 ]
Liu, Tong [2 ]
Jin, Hongyan [3 ]
Li, Zhenghao [4 ]
Liu, Yaxin [4 ]
Liu, Donghao [4 ]
Wang, Dongbo [4 ,5 ]
机构：
[1] CNPC Bohai Drilling Engn Co Ltd, Binhai Area, Tuanjie Eeat Rd,Haibin St, Tianjin 300457, Peoples R China
[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanob SINANO, Vacuum Interconnected Nanotech Workstat Nano 10, Suzhou 215123, Peoples R China
[3] Suzhou Inst Prod Qual Supervis & Inspection, Suzhou 215128, Peoples R China
[4] Harbin Inst Technol, Natl Key Lab Precis Hot Proc Met, Harbin 150001, Peoples R China
[5] Harbin Inst Technol, Sch Mat Sci & Engn, Dept Optoelect Informat Sci, Harbin 150001, Peoples R China
来源：
MICROMACHINES | 2023年 / 14卷 / 02期
关键词：
Ga2O3; O-2 flow rate; magnetron sputtering; OPTICAL-PROPERTIES; FILMS; PRESSURE;
D O I：
10.3390/mi14020260
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
The influence of the O-2 flow rate on the properties of gallium oxide (Ga2O3) by RF magnetron sputtering was studied. X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmittance spectra, and photoluminescence (PL) spectra have been employed to study the Ga2O3 thin films. With the increase in oxygen flow rate, both the crystal quality and luminescence intensity of the Ga2O3 samples first decrease and then enhance. All these observations suggested that the reduction in the oxygen defect density is responsible for the improvement in the crystal quality and emission intensity of the material. Our results demonstrated that high-quality Ga2O3 materials could be obtained by adjusting the oxygen flow rate.
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页数：7
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