XRD Investigation of the Crystalline Quality of Sn-doped β-Ga2O3 Films Deposited by the RF Magnetron Sputtering Method

被引：5

作者：

Kudou, Jyun ^{[1
]}

Funasaki, Suguru ^{[1
]}

Takahara, Motoki ^{[1
]}

Tsunoda, Isao ^{[1
]}

Takakura, Kenichiro ^{[1
]}

Ohyama, Hidenori ^{[1
]}

Nakashima, Toshiyuki ^{[2
]}

Shibuya, Mutsuo ^{[3
]}

Murakami, Katsuya ^{[5
]}

Simoen, Eddy ^{[4
]}

Claeys, Cor ^{[4
,6
]}

机构：

[1] Kumamoto Natl Coll Technol, 2659-2 Suya, Kumamoto 8621102, Japan

[2] Chuo Denshi Kogyo Co Ltd, Tokyo 1540004, Japan

[3] Echo Mother, Kumamoto 8612401, Japan

[4] IMEC, B-3001 Louvain, Belgium

[5] Japan Gas Chemi, Kumamoto 8612403, Japan

[6] Katholieke Univ Leuven, Dept EE, B-3001 Louvain, Belgium

来源：

DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV | 2012年 / 725卷

关键词：

Gallium oxide; Transparent conducting oxide; Impurity doping; Sputtering; EDX; XRD; SEM; THIN-FILMS; OPTICAL-ABSORPTION; GAMMA-GA2O3;

D O I：

10.4028/www.scientific.net/MSF.725.269

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To increase the conductivity of beta-Ga2O3 films, Sn doping in the beta-Ga2O3 films has been explored using co-sputtering. Growth of beta-Ga2O3 was confirmed by the XRD pattern of the undoped sample. However, it is shown that the Ga2O3 phase is transformed from the beta to the gamma phase by Sn doping, because of the increase of the phase transition temperature from the gamma phase to the beta phase. To improve the crystalline quality, additional annealing at 900 degrees C for 60 min is performed to the Sn-doped film. The XRD peaks corresponding with beta-Ga2O3 could be confirmed after the additional annealing.

引用

页码：269 / +

页数：2

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