Sn-doped β-Ga2O3 nanowires deposited by radio frequency powder sputtering

被引：8
|
作者：
Lee, Su Yong [1 ]
Kang, Hyon Chol [2 ]
机构：
[1] POSTECH, Pohang Accelerator Lab, Pohang 37673, Gyeongbuk, South Korea
[2] Chosun Univ, Dept Mat Sci & Engn, Gwangju 61452, South Korea
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 01期
基金：
新加坡国家研究基金会;
关键词：
HIGH-TEMPERATURE; GA2O3; NANOWIRES; SINGLE-CRYSTAL; GROWTH; SENSORS; FILMS; PHOTODETECTOR; LUMINESCENCE; SENSITIVITY; MORPHOLOGY;
D O I：
10.7567/JJAP.57.01AE02
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the synthesis and characterization of Sn-doped beta-Ga2O3 nanowires (NWs) deposited using radio frequency powder sputtering. The growth sequence of Sn-doped beta-Ga2O3 NWs is similar to that of the undoped beta-Ga2O3 NWs. Self-assembled Ga clusters act as seeds for initiating the growth of Sn-doped beta-Ga2O3 NWs through a vapor-liquid-solid process, while Sn atoms are incorporated into the trunk of NWs uniformly. Different from the straight shape of undoped NWs, the conical shape of NWs is observed, which is attributed to the change in supersaturation conditions and the diffusion of the catalyst tip and reaction species. (c) 2018 The Japan Society of Applied Physics
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页数：4
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