Chemically Amplified Resist Based on Dendritic Molecular Glass for Electron Beam Lithography

被引:11
|
作者
Hu Shengwen [1 ,3 ]
Chen Jinping [1 ]
Yu Tianjun [1 ]
Zeng Yi [1 ,3 ]
Yang Guoqiang [2 ,3 ]
Li Yi [1 ,3 ]
机构
[1] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci BNLMS, Key Lab Photochem, Beijing 100190, Peoples R China
[3] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
基金
中国国家自然科学基金;
关键词
Dendritic molecule; Molecular glass; Chemically amplified resist; Electron beam lithography; ADAMANTYL ESTER GROUPS; PATTERN COLLAPSE; NM RESOLUTION; DERIVATIVES; PHOTORESISTS; FABRICATION;
D O I
10.1007/s40242-022-2163-1
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A novel dendritic molecular glass(MG) containing adamantane core(AD-15) was synthesized and characterized. It exhibits good solubility in common organic solvents and a stable amorphous state at room temperature, which contributes to forming films with different thicknesses by spin-coating. The thermal analysis of AD-15 indicates that no apparent glass transition temperature(T-g) is observed before the thermal decomposition temperature(T-d=160 degrees C). The good thermal resistance suggests that it can satisfy the lithographic process and is a candidate for photoresist materials. The patterning properties of AD-15 resist were evaluated by electron beam lithography(EBL). By optimizing the lithographic process parameters, AD-15 resist can achieve 40 nm half-pitch patterns with a line-edge roughness of 4.0 nm. The contrast and sensitivity of AD-15 resist were 1.9 and 67 mu C/cm(2), respectively. Compared with the commercial PMMA(950k) electron beam resist, the sensitivity of AD-15 resist increases by 6 times. This study provides a new example of molecular glass resist with high resolution and sensitivity for EBL.
引用
收藏
页码:139 / 143
页数:5
相关论文
共 50 条
  • [31] Sub-150nm electron beam lithography using AZPN114 chemically amplified resist
    Cui, Z
    Moody, RA
    Loader, IM
    Watson, JG
    Prewett, PD
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XIV, 1997, 3049 : 667 - 675
  • [32] Proximity correction of chemically amplified resists for electron beam lithography
    Cui, Z
    Prewett, PD
    MICROELECTRONIC ENGINEERING, 1998, 42 : 183 - 186
  • [33] Proximity correction of chemically amplified resists for electron beam lithography
    Cui, Zh.
    Prewett, Ph.D.
    Microelectronic Engineering, 1998, 41-42 : 183 - 186
  • [34] A novel dual-tone molecular glass resist based on adamantane derivatives for electron beam lithography
    Hu, Shengwen
    Chen, Jinping
    Yu, Tianjun
    Zeng, Yi
    Wang, Shuangqing
    Guo, Xudong
    Yang, Guoqiang
    Li, Yi
    JOURNAL OF MATERIALS CHEMISTRY C, 2022, 10 (26) : 9858 - 9866
  • [35] A chemically amplified calix[4]arene-based electron-beam resist
    Sailer, H
    Ruderisch, A
    Kern, DP
    Schurig, V
    MICROELECTRONIC ENGINEERING, 2004, 73-4 : 228 - 232
  • [36] A STATISTICALLY BASED MODEL OF ELECTRON-BEAM EXPOSED, CHEMICALLY AMPLIFIED NEGATIVE RESIST
    TAM, NN
    LIU, HY
    SPANOS, C
    NEUREUTHER, AR
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 3362 - 3369
  • [37] Chemically amplified molecular resists for e-beam lithography
    Manyam, J.
    Gibbons, F. P.
    Diegoli, S.
    Manickam, M.
    Preece, J. A.
    Palmer, R. E.
    Robinson, A. P. G.
    MICROPROCESSES AND NANOTECHNOLOGY 2007, DIGEST OF PAPERS, 2007, : 530 - +
  • [38] Chemically amplified molecular resists for e-beam lithography
    Gibbons, F. P.
    Manyam, J.
    Diegoli, S.
    Manickam, M.
    Preece, J. A.
    Palmer, R. E.
    Robinson, A. P. G.
    MICROELECTRONIC ENGINEERING, 2008, 85 (5-6) : 764 - 767
  • [39] Chemically amplified molecular resists based on noria derivatives containing adamantyl ester groups for electron beam lithography
    Yamamoto, Hiroki
    Tagawa, Seiichi
    Kozawa, Takahiro
    Kudo, Hiroto
    Okamoto, Kazumasa
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (04):
  • [40] High performance chemically amplified positive electron-beam resist
    Namiki, T
    Kon, J
    Yano, E
    MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2, 1999, 3678 : 1332 - 1340