共 50 条
- [41] Dependence of acid yield on chemically amplified electron beam resist thickness JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (6B): : 5445 - 5449
- [44] Patterning performance of chemically amplified resist in EUV lithography EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VII, 2016, 9776
- [45] Analysis of acid yield generated in chemically amplified electron beam resist JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (06): : 3055 - 3060
- [46] Nonchemically amplified molecular resist based on multi-sulfonium modified triptycene for electron beam and extreme ultraviolet lithography JOURNAL OF MICRO-NANOPATTERNING MATERIALS AND METROLOGY-JM3, 2024, 23 (03):
- [47] Optimization of PHS-based chemically amplified negative resist for 100-kV electron-beam projection lithography (EPL) EMERGING LITHOGRAPHIC TECHNOLOGIES IV, 2000, 3997 : 344 - 351