A study of hydrogen plasma-induced charging effect in EUV lithography systems

被引：0
|
作者：
Huang, Yao-Hung [1 ]
Lin, Chrong Jung [1 ]
King, Ya-Chin [1 ]
机构：
[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu, Taiwan
来源：
DISCOVER NANO | 2023年 / 18卷 / 01期
关键词：
Extreme ultraviolet (EUV); Lithography; EUV-induced hydrogen plasma;
D O I：
10.1186/s11671-023-03799-4
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In the extreme ultraviolet lithography system, EUV-induced hydrogen plasma charging effect is observed by in situ embedded micro-detector array. The 4k-pixel on-wafer array can detect and store the distributions of H-2 plasma in each in-pixel floating gate for non-destructive off-line read. The local uniformity of H-2 plasma intensity extracted by the threshold voltages on an array and its distributions across a wafer by the average bit cell current of MDAs provide insights into the detailed conditions inside advanced EUV lithography chambers.
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页数：7
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