Improving CdMnTe Detector Performance by Adding 2% of Selenium

被引:0
|
作者
Kim, Kihyun [1 ]
Bolotnikov, Aleksey E. [2 ]
James, Ralph B. [3 ]
机构
[1] Korea Univ, Sch Hlth & Environm Sci, Seoul 02841, South Korea
[2] Brookhaven Natl Lab, Upton, NY 11973 USA
[3] Savannah River Natl Lab, Aiken, SC 29808 USA
关键词
CdMnTe (CMT); CdMnTeSe (CMTS); etch-pit density (EPD); pulse height spectra; selenium doping; semiconductor X-ray and gamma-ray detectors; PHASE-DIAGRAM; GROWTH; CDZNTE; STRESS;
D O I
10.1109/TNS.2024.3355760
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
About 2% of selenium was added to CdMnTe (CMT) to reveal the role of selenium in CMT material used as a gamma-ray detector. The average etch-pit density (EPD) in a typical 2-in CdMnTeSe (CMTS) wafer was measured to be about 8.3 x 10(3) cm(-2) except for the edge regions, and the radial nonuniformity of the bandgap along the wafer was about 2-meV. The typical mobility-lifetime product of electrons and holes was evaluated to be 3.06 x 10(-3) cm(2)/V and 3.1 x 10(-4) cm(2)/V, respectively. The energy resolution of the 122-keV photo-peak for a Co-57 radioactive source with a planar CMTS detector was 5.2%, demonstrating a positive effect associated with adding dilute amounts of Se to CMT. The enhanced detector performance in a planar CMTS detector is attributed to an improved value of hole mobility-lifetime product in CMTS, which mitigates the adverse hole tailing effect found in CdZnTe (CZT) and CMT detectors.
引用
收藏
页码:234 / 237
页数:4
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