Fabrication of CdMnTe semiconductor as radiation detector

被引：0
|
作者：
L. A. Najam
N. Y. Jamil
R. M. Yousif
机构：
[1] Mosul University,Department of Physics, College of Science
[2] Mosul University,Department of Environmental Science Technology, College of Environmental Science and Technology
来源：
Indian Journal of Physics | 2012年 / 86卷
关键词：
CdMnTe; Gamma ray detector; II–VI materials; MOS device; Energy resolution; 29.40.Wk;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this work, devices have been fabricated as to be nuclear detector, from p-CdMnTe. Three devices were prepared: First planar detector with (Au) ohmic contact on both sides; Second as schottky type device of In-CdMnTe with (Au) ohmic contact on the back face; and thirdly metal oxide semiconductor (MOS) device for which the samples annealed under Oxygen flow for (2 h.) at 700 °C, this device (MOS) when connected to conventional nuclear spectroscopy gave reasonable but not high quality signals due to irradiating with 137Cs, 241Am and (137Cs + 241Am). Matlab- software based on numerical methods is used to analyze the data. Resolution through the Full Width at Half Maximum and the area under the peak and the error for this detector are presented.
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页码：267 / 272
页数：5
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