Fabrication of CdMnTe semiconductor as radiation detector

被引：13
|
作者：
Najam, L. A. [1 ]
Jamil, N. Y. [1 ]
Yousif, R. M. [2 ]
机构：
[1] Univ Mosul, Coll Sci, Dept Phys, Mosul 00964, Nineveh, Iraq
[2] Univ Mosul, Coll Environm Sci & Technol, Dept Environm Sci Technol, Mosul 00964, Nineveh, Iraq
来源：
INDIAN JOURNAL OF PHYSICS | 2012年 / 86卷 / 04期
关键词：
CdMnTe; Gamma ray detector; II-VI materials; MOS device; Energy resolution; GAMMA-RAY DETECTORS; CDZNTE DETECTORS; ION IRRADIATION; X-RAY; FILMS; CRYSTAL; GROWTH;
D O I：
10.1007/s12648-012-0051-0
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this work, devices have been fabricated as to be nuclear detector, from p-CdMnTe. Three devices were prepared: First planar detector with (Au) ohmic contact on both sides; Second as schottky type device of In-CdMnTe with (Au) ohmic contact on the back face; and thirdly metal oxide semiconductor (MOS) device for which the samples annealed under Oxygen flow for (2 h.) at 700 A degrees C, this device (MOS) when connected to conventional nuclear spectroscopy gave reasonable but not high quality signals due to irradiating with Cs-137, Am-241 and (Cs-137 + Am-241). Matlab- software based on numerical methods is used to analyze the data. Resolution through the Full Width at Half Maximum and the area under the peak and the error for this detector are presented.
引用
收藏
页码：267 / 272
页数：6
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