Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy (vol 11, 111113,2023)

被引：0
|
作者：
Raghuvansy, Sushma [1 ]
Mccandless, Jon P. [1 ]
Schowalter, Marco [1 ]
Karg, Alexander [1 ]
Alonso-Orts, Manuel [1 ,3 ]
Williams, Martin S. [1 ]
Tessarek, Christian [1 ]
Figge, Stephan [1 ]
Nomoto, Kazuki [2 ]
Xing, Huili Grace [2 ,4 ]
Schlom, Darrell G. [4 ,5 ,6 ]
Rosenauer, Andreas [1 ,3 ]
Jena, Debdeep [2 ,4 ]
Eickhoff, Martin [1 ,3 ]
Vogt, Patrick [1 ,4 ]
机构：
[1] Univ Bremen, Inst Solid State Phys, Otto-Hahn-Allee 1, D-28359 Bremen, Germany
[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA
[3] Univ Bremen, MAPEX Ctr Mat & Proc, D-28359 Bremen, Germany
[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
[5] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA
[6] Leibniz Inst Kristallzuchtung, Max-Born-Str 2, D-12489 Berlin, Germany
来源：
APL MATERIALS | 2024年 / 12卷 / 01期
关键词：
D O I：
10.1063/5.0192370
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页数：2
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