Growth of β-Ga2O3 and ε/κ-Ga2O3 on AlN(0001) by molecular-beam epitaxy (vol 11, 111113,2023)

被引：0

作者：

Raghuvansy, Sushma ^{[1
]}

Mccandless, Jon P. ^{[1
]}

Schowalter, Marco ^{[1
]}

Karg, Alexander ^{[1
]}

Alonso-Orts, Manuel ^{[1
,3
]}

Williams, Martin S. ^{[1
]}

Tessarek, Christian ^{[1
]}

Figge, Stephan ^{[1
]}

Nomoto, Kazuki ^{[2
]}

Xing, Huili Grace ^{[2
,4
]}

Schlom, Darrell G. ^{[4
,5
,6
]}

Rosenauer, Andreas ^{[1
,3
]}

Jena, Debdeep ^{[2
,4
]}

Eickhoff, Martin ^{[1
,3
]}

Vogt, Patrick ^{[1
,4
]}

机构：

[1] Univ Bremen, Inst Solid State Phys, Otto-Hahn-Allee 1, D-28359 Bremen, Germany

[2] Cornell Univ, Sch Elect & Comp Engn, Ithaca, NY 14853 USA

[3] Univ Bremen, MAPEX Ctr Mat & Proc, D-28359 Bremen, Germany

[4] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[5] Cornell Univ, Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

[6] Leibniz Inst Kristallzuchtung, Max-Born-Str 2, D-12489 Berlin, Germany

来源：

APL MATERIALS | 2024年 / 12卷 / 01期

关键词：

D O I：

10.1063/5.0192370

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页数：2

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