Random Telegraph Noise Simulation and the Impact on Noise Sensitive Design

被引：0

作者：

Lu, M. L. ^{[1
]}

Hung, C. M. ^{[1
]}

Fan, M. L. ^{[1
]}

Huang, Y. S. ^{[1
]}

Li, C. C. ^{[1
]}

Yuan, M. S. ^{[1
]}

Chang, C. H. ^{[1
]}

Chiang, C. S. ^{[1
]}

Su, K. W. ^{[1
]}

Lin, C. K. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, 168,Pk Ave 2,Hsin Chu Sci Pk, Hsinchu 30844, Taiwan

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

TMI; RTN Model;

D O I：

10.23919/SISPAD57422.2023.10319580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Adopting SPICE simulation to access the impact from various noise sources of transistor such as flicker noise, thermal noise as well as shot noise on circuit performance has been a common way for circuit design. However, the implementation of Random Telegraph Noise (RTN) on existing design considerations is rarely addressed. In this paper, a practical model approach to simulate RTN through TSMC Model Interface (TMI) has been disclosed. The RTN simulation approaches are also demonstrated with a case that shows how to mitigate RTN for the noise sensitive circuit. Therefore, the RTN related simulations can be executed more correctly with the right expectation.

引用

页码：113 / 116

页数：4

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