Random Telegraph Noise Simulation and the Impact on Noise Sensitive Design

被引：0

作者：

Lu, M. L. ^{[1
]}

Hung, C. M. ^{[1
]}

Fan, M. L. ^{[1
]}

Huang, Y. S. ^{[1
]}

Li, C. C. ^{[1
]}

Yuan, M. S. ^{[1
]}

Chang, C. H. ^{[1
]}

Chiang, C. S. ^{[1
]}

Su, K. W. ^{[1
]}

Lin, C. K. ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, 168,Pk Ave 2,Hsin Chu Sci Pk, Hsinchu 30844, Taiwan

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

TMI; RTN Model;

D O I：

10.23919/SISPAD57422.2023.10319580

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Adopting SPICE simulation to access the impact from various noise sources of transistor such as flicker noise, thermal noise as well as shot noise on circuit performance has been a common way for circuit design. However, the implementation of Random Telegraph Noise (RTN) on existing design considerations is rarely addressed. In this paper, a practical model approach to simulate RTN through TSMC Model Interface (TMI) has been disclosed. The RTN simulation approaches are also demonstrated with a case that shows how to mitigate RTN for the noise sensitive circuit. Therefore, the RTN related simulations can be executed more correctly with the right expectation.

引用

页码：113 / 116

页数：4

共 50 条

[21] FROM PERSISTENT RANDOM WALK TO THE TELEGRAPH NOISE
Herrmann, S.
Vallois, P.
[J]. STOCHASTICS AND DYNAMICS, 2010, 10 (02) : 161 - 196
[22] Random telegraph noise in carbon nanotubes and peapods
Jhang, S. H.
Lee, S. W.
Lee, D. S.
Yu, H. Y.
U., Dettlaff
Campbell, E. E. B.
Roth, S.
Park, Y. W.
[J]. CURRENT APPLIED PHYSICS, 2006, 6 (06) : 987 - 991
[23] Random telegraph noise analysis in time domain
Yuzhelevski, Y
Yuzhelevski, M
Jung, G
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (04): : 1681 - 1688
[24] Characterization of Random Telegraph Noise and its impact on reliability of SRAM sense amplifiers
Martin-Martinez, J.
Diaz, J.
Rodriguez, R.
Nafria, M.
Aymerich, X.
Roca, E.
Fernandez, F. V.
Rubio, A.
[J]. 2014 5TH EUROPEAN WORKSHOP ON CMOS VARIABILITY (VARI), 2014,
[25] SiC Strained nMOSFETs With Enhanced High- Frequency Performance and Impact on Flicker Noise and Random Telegraph Noise
Guo, Jyh-Chyurn
Chang, Chih-Shiang
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2020, 68 (06) : 2259 - 2267
[26] Impact of Hot Carrier Aging on Random Telegraph Noise and Within a Device Fluctuation
Manut, Azrif B.
Zhang, Jian Fu
Duan, Meng
Ji, Zhigang
Zhang, Wei Dong
Kaczer, Ben
Schram, Tom
Horiguchi, Naoto
Groeseneken, Guido
[J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016, 4 (01): : 15 - 21
[27] Impact of Single Trap Random Telegraph Noise on Heterojunction TFET SRAM Stability
Pandey, Rahul
Saripalli, Vinay
Kulkarni, Jaydeep P.
Narayanan, Vijaykrishnan
Datta, Suman
[J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (03) : 393 - 395
[28] Random Telegraph Noise in Resistive Random Access Memories: Compact Modeling and Advanced Circuit Design
Puglisi, Francesco Maria
Zagni, Nicolo
Larcher, Luca
Pavan, Paolo
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (07) : 2964 - 2972
[29] ON 1/F NOISE AND RANDOM TELEGRAPH NOISE IN VERY SMALL ELECTRONIC DEVICES
KLEINPENNING, TGM
[J]. PHYSICA B, 1990, 164 (03): : 331 - 334
[30] AN AUTOMATIC SYSTEM FOR IDENTIFICATION OF RANDOM TELEGRAPH SIGNAL (RTS) NOISE IN NOISE SIGNALS
Stawarz -Graczyk, Barbara
Zaleski, Dariusz
Konczakowska, Alicja
[J]. METROLOGY AND MEASUREMENT SYSTEMS, 2007, 14 (02) : 219 - 228

← 1 2 3 4 5 →