Transcapacitances Modeling in ultra-thin gate-all-around junctionless nanowire FETs, including 2D quantum confinement

被引：2

作者：

Alshebly, Wisam ^{[1
]}

Shalchian, Majid ^{[2
]}

Shafizade, Danial ^{[3
]}

Chalechale, Amirali ^{[2
]}

Jazaeri, Farzan ^{[4
]}

机构：

[1] Minist Oil, Babylon Branch, Oil Prod Distribut Co, Babel, Iraq

[2] Amirkabir Univ Technol, Elect Engn Dept, 424 Hafez Ave, Tehran, Iran

[3] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[4] Ecole Polytech Fed Lausanne, Electron Device Modeling & Technol Lab, Lausanne, Switzerland

来源：

SOLID-STATE ELECTRONICS | 2023年 / 200卷

关键词：

Gate-all-around field effect transistors  (GAA-FET); Junctionless (JL) FETs; Nanowire FETs; Quantum well; Ultra-thin body silicon on insulator (UTBSOI); Transcapacitances;

D O I：

10.1016/j.sse.2022.108544

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we propose an analytical model for the intrinsic transcapacitances in ultra-thin gate-all-around junctionless nanowire field effect transistors in the presence of confined energy states of electrons. The validity of the developed model is confirmed from deep depletion to accumulation and from linear to saturation, based on the numerical solution of the Schrodinger equation using Technology Computer Aided Design (TCAD) simulations. This represents an important stage toward AC small signal analysis of junctionless nanowire-based circuits.

引用

页数：7

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