Photoemission of graded-doping GaN photocathode

被引：0
|
作者：
付小倩 [1 ,2 ]
常本康 [1 ]
王晓晖 [1 ]
李飙 [1 ]
杜玉杰 [1 ]
张俊举 [1 ]
机构：
[1] Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology
[2] School of Information Science and Engineering,University of Jinan
来源：
Chinese Physics B | 2011年 / 20卷 / 03期
基金：
中国国家自然科学基金;
关键词：
GaN photocathode; graded-doping; photoemission; quantum efficiency;
D O I：
暂无
中图分类号：
O472.8 [];
学科分类号：
摘要：
We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons,which results in the enhancement of quantum efficiency.The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated.To prevent negative differential mobility from appearing,the surface doping concentration needs to be optimized,and it is calculated to be 3.19×10 17 cm 3.The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.
引用
收藏
页码：485 / 489
页数：5
相关论文
共 50 条
  • [41] Influence of Al fraction on photoemission performance of AlGaN photocathode
    Hao, Guanghui
    Chang, Benkang
    Shi, Feng
    Zhang, Junju
    Zhang, Yijun
    Chen, Xinlong
    Jin, Muchun
    APPLIED OPTICS, 2014, 53 (17) : 3637 - 3641
  • [42] Photoemission spectroscopy study of a multi-alkali photocathode
    Ettema, ARHF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 442 (1-3): : 342 - 345
  • [43] Mechanism for the dependence of the photoemission threshold of a photocathode on its irradiance
    Vezirov, KN
    TECHNICAL PHYSICS LETTERS, 1998, 24 (09) : 706 - 708
  • [44] Photoemission behaviors of transmission-mode InGaAs photocathode
    Jin Muchun
    Chang Benkang
    Chen Xinlong
    Zhang Yijun
    Cheng Hongchang
    OPTOELECTRONIC DEVICES AND INTEGRATION V, 2014, 9270
  • [45] Mechanism for the dependence of the photoemission threshold of a photocathode on its irradiance
    Kh. N. Vezirov
    Technical Physics Letters, 1998, 24 : 706 - 708
  • [46] MEASUREMENT OF THE PHOTOEMISSION OF 2 ELECTRONS FROM A MULTIALKALI PHOTOCATHODE
    LINDBLOM, P
    OLSSON, T
    APPLIED OPTICS, 1991, 30 (04): : 367 - 369
  • [47] Effect of Cs adsorption on the photoemission performance of GaAlAs photocathode
    Chen, Xinlong
    Jin, Muchun
    Zeng, Yugang
    Hao, Guanghui
    Zhang, Yijun
    Chang, Benkang
    Shi, Feng
    Cheng, Hongchang
    APPLIED OPTICS, 2014, 53 (32) : 7709 - 7715
  • [48] Improved electron capture capability of field-assisted exponential-doping GaN nanowire array photocathode
    Lei Liu
    Feifei Lu
    Sihao Xia
    Yu Diao
    Jian Tian
    JournalofMaterialsScience&Technology, 2020, 42 (07) : 54 - 62
  • [49] Improved electron capture capability of field-assisted exponential-doping GaN nanowire array photocathode
    Liu, Lei
    Lu, Feifei
    Xia, Sihao
    Diao, Yu
    Tian, Jian
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2020, 42 : 54 - 62
  • [50] Comparison of First and Second Annealing GaN Photocathode
    Wang, Xiaohui
    Ge, Zhonghao
    Hao, Guanghui
    Gao, Pin
    Chang, Benkang
    Wang, Xiaohui
    Shi, Feng
    Guo, Hui
    2012 PHOTONICS GLOBAL CONFERENCE (PGC), 2012,
12345