Photoemission of graded-doping GaN photocathode

被引：0
|
作者：
付小倩 [1 ,2 ]
常本康 [1 ]
王晓晖 [1 ]
李飙 [1 ]
杜玉杰 [1 ]
张俊举 [1 ]
机构：
[1] Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology
[2] School of Information Science and Engineering,University of Jinan
来源：
Chinese Physics B | 2011年 / 20卷 / 03期
基金：
中国国家自然科学基金;
关键词：
GaN photocathode; graded-doping; photoemission; quantum efficiency;
D O I：
暂无
中图分类号：
O472.8 [];
学科分类号：
摘要：
We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons,which results in the enhancement of quantum efficiency.The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated.To prevent negative differential mobility from appearing,the surface doping concentration needs to be optimized,and it is calculated to be 3.19×10 17 cm 3.The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.
引用
收藏
页码：485 / 489
页数：5
相关论文
共 50 条
  • [31] Enhancement of photoemission capability and electron collection efficiency of field-assisted GaN nanowire array photocathode
    Liu, Lei
    Xia, Sihao
    Diao, Yu
    Lu, Feifei
    Tian, Jian
    NANOTECHNOLOGY, 2020, 31 (02)
  • [32] Vertical GaN trench MOSFETs with step-graded channel doping
    Zhu, Renqiang
    Jiang, Huaxing
    Tang, Chak Wah
    Lau, Kei May
    APPLIED PHYSICS LETTERS, 2022, 120 (24)
  • [33] Research and development of GaN photocathode
    Li Biao
    Chang Ben-Kang
    Xu Yuan
    Du Xiao-Qing
    Du Yu-Jie
    Wang Xiao-Hui
    Zhang Jun-Ju
    ACTA PHYSICA SINICA, 2011, 60 (08)
  • [34] Transmission-mode GaN photocathode based on graded AlxGa1-xN buffer layer
    Du, Xiaoqing
    Chang, Benkang
    Qian, Yunsheng
    Gao, Pin
    CHINESE OPTICS LETTERS, 2011, 9 (01)
  • [35] Spin relaxation of electrons in graded doping strained GaAs-layer photocathode of polarized electron source
    Zhen, WD
    Matsuyama, T
    Horinaka, H
    Wada, K
    Nakanishi, T
    Okumi, S
    Kato, T
    Saka, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (1AB): : L41 - L43
  • [36] Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathode
    Yang, Zhi
    Chang, Benkang
    Zou, Jijun
    Qiao, Jianliang
    Gao, Pin
    Zeng, Yiping
    Li, Hui
    APPLIED OPTICS, 2007, 46 (28) : 7035 - 7039
  • [37] Transmission-mode GaN photocathode based on graded AlxGa1-xN buffer layer
    杜晓晴
    常本康
    钱芸生
    高频
    ChineseOpticsLetters, 2011, 9 (01) : 17 - 20
  • [38] Affection of different doping structure on quantum efficiency and spectrum response of reflection-mode GaN photocathode
    Fu, Jiangtao
    Zheng, Guoqiang
    Zhou, Lipeng
    Ma, Huahong
    OPTIK, 2013, 124 (19): : 3804 - 3805
  • [39] Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode
    Qiao Jian-Liang
    Xu Yuan
    Gao You-Tang
    Niu Jun
    Chang Ben-Kang
    ACTA PHYSICA SINICA, 2017, 66 (06)
  • [40] PHOTOEMISSION FROM GAN
    PANKOVE, JI
    SCHADE, H
    APPLIED PHYSICS LETTERS, 1974, 25 (01) : 53 - 55
12345