Mechanism for the dependence of the photoemission threshold of a photocathode on its irradiance

被引:0
|
作者
Kh. N. Vezirov
机构
[1] Photoelectronics Research Institute,
来源
Technical Physics Letters | 1998年 / 24卷
关键词
Secondary Electron; Current Flow; Electron Emission; Secondary Electron Emission; Photoemission Threshold;
D O I
暂无
中图分类号
学科分类号
摘要
Secondary electron emission is shown to occur at the boundary of the working region of a photocathode when current flows through this region, causing a deviation from the known classical laws of photoemission. It is established that the sensitivity and photoemission threshold of the photocathode depend on the strength of the photocurrent flowing through it.
引用
收藏
页码:706 / 708
页数:2
相关论文
共 50 条
  • [1] Mechanism for the dependence of the photoemission threshold of a photocathode on its irradiance
    Vezirov, KN
    TECHNICAL PHYSICS LETTERS, 1998, 24 (09) : 706 - 708
  • [2] Study of photoemission mechanism for varied doping GaN photocathode
    Qiao, Jianliang
    Xu, Yuan
    Niu, Jun
    Gao, Youtang
    Chang, Benkang
    AOPC 2015: OPTICAL AND OPTOELECTRONIC SENSING AND IMAGING TECHNOLOGY, 2015, 9674
  • [3] Selective photoemission of Au photocathode
    Yuan Zheng
    Liu Shen-Ye
    Cao Zhu-Rong
    Li Yun-Feng
    Chen Tao
    Li Hang
    Zhang Hai-Ying
    Chen Ming
    ACTA PHYSICA SINICA, 2010, 59 (07) : 4967 - 4971
  • [4] Photoemission and degradation of semiconductor photocathode
    Huang, Peng-Wei
    Qian, Houjun
    Du, Yingchao
    Huang, Wenhui
    Zhang, Zhen
    Tang, Chuanxiang
    PHYSICAL REVIEW ACCELERATORS AND BEAMS, 2019, 22 (12):
  • [5] Photoemission Properties of a Multialkali Photocathode
    Rusetsky, V. S.
    Golyashov, V. A.
    Mironov, A., V
    Demin, A. Yu
    Tereshchenko, O. E.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2021, 57 (05) : 505 - 510
  • [6] Photoemission Properties of a Multialkali Photocathode
    V. S. Rusetsky
    V. A. Golyashov
    A. V. Mironov
    A. Yu. Demin
    O. E. Tereshchenko
    Optoelectronics, Instrumentation and Data Processing, 2021, 57 : 505 - 510
  • [7] Sub-threshold ultrafast one-photon photoemission from a Cu(111) photocathode
    Angeloni, L. A.
    Shan, I. -J.
    Schroeder, W. Andreas
    AIP ADVANCES, 2022, 12 (10)
  • [8] TEMPERATURE-DEPENDENCE OF THE PHOTOEMISSION THRESHOLD OF THE KCL-AG SYSTEM
    SENDECKI, S
    SURFACE SCIENCE, 1991, 247 (2-3) : 294 - 298
  • [9] Photoemission of graded-doping GaN photocathode
    Fu Xiao-Qian
    Chang Ben-Kang
    Wang Xiao-Hui
    Li Biao
    Du Yu-Jie
    Zhang Jun-Ju
    CHINESE PHYSICS B, 2011, 20 (03)
  • [10] Photoemission of graded-doping GaN photocathode
    付小倩
    常本康
    王晓晖
    李飙
    杜玉杰
    张俊举
    Chinese Physics B, 2011, 20 (03) : 485 - 489