Advantages of InGaN/GaN multiple quantum well solar cells with stepped-thickness quantum wells

被引：0

作者：

陈鑫 ^{[1
]}

赵璧君 ^{[1
]}

任志伟 ^{[1
]}

童金辉 ^{[1
]}

王幸福 ^{[1
]}

卓祥景 ^{[1
]}

章俊 ^{[1
]}

李丹伟 ^{[1
]}

易翰翔 ^{[1
]}

李述体 ^{[1
]}

机构：

[1] Laboratory of Nanophotonic Functional Materials and Devices,Institute of Opto-electronic Materials and Technology,South China Normal University

来源：

Chinese Physics B | 2013年 / 22卷 / 07期

基金：

中国国家自然科学基金;

关键词：

metal organic chemical vapor deposition (MOCVD); GaN based solar cells; stepped-thickness quantum wells;

D O I：

暂无

中图分类号：

TM914.4 [太阳能电池]; O413 [量子论];

学科分类号：

070201 ; 080502 ;

摘要：

InGaN/GaN multiple quantum well (MQW) solar cells with stepped-thickness quantum wells (SQW) are designed and grown by metal-organic chemical vapor deposition. The stepped-thickness quantum wells structure, in which the well thickness becomes smaller and smaller along the growth direction, reveals better crystalline quality and better spectral overlap with the solar spectrum. Consequently, the short-circuit current density (Jsc) and conversion efficiency of the solar cell are enhanced by 27.12% and 56.41% compared with the conventional structure under illumination of AM1.5G (100 mW/cm2). In addition, approaches to further promote the performance of InGaN/GaN multiple quantum well solar cells are discussed and presented.

引用

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页码：578 / 581

页数：4

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