Interdiffusion of In and Ga in InGaN/GaN multiple quantum wells

被引：83
|
作者：
Chuo, CC [1 ]
Lee, CM [1 ]
Chyi, JI [1 ]
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 32054, Taiwan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 03期
关键词：
D O I：
10.1063/1.1339991
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal stability of InxGa1-xN/GaN multiple quantum wells with InN mole fraction of similar to0.23 and similar to0.30 was investigated by postgrowth thermal annealing. Low temperature photoluminescence spectroscopy was employed to determine the temperature dependence of the interdiffusion coefficient of In and Ga in InGaN/GaN quantum wells. The interdiffusion process is characterized by a single activation energy of about 3.4 +/-0.5 eV and governed by vacancy-controlled second-nearest-neighbor hopping. Due to composition inhomogeneity, lower diffusivity is observed at the early stage of thermal annealing. (C) 2001 American Institute of Physics.
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收藏
页码：314 / 316
页数：3
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