Characteristics of InGaN multiple quantum well blue-violet laser diodes

被引：0
|
作者：
LI Deyao1
2. Nano-Optoelectronics Laboratory
机构：
来源：
Science in China(Series E:Technological Sciences) | 2006年 / 06期
关键词：
metalorganic chemical vapor deposition (MOCVD); GaN-based laser diodes; multiple quantum well; ridge waveguide; threshold current;
D O I：
暂无
中图分类号：
TN365 [半导体激光器件];
学科分类号：
摘要：
Studies on InGaN multiple quantum well blue-violet laser diodes have been reported. Laser structures with long-period multiple quantum wells were grown by metal-organic chemical vapor deposition. Triple-axis X-ray diffraction (TAXRD) measurements show that the multiple quantum wells were high quality. Ridge waveguide laser diodes were fabricated with cleaved facet mirrors. The laser diodes lase at room temperature under a pulsed current. A threshold current density of 3.3 kA/cm2 and a characteristic temperature T0 of 145 K were observed for the laser diode.
引用
收藏
页码：727 / 732
页数：6
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