Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes

被引：0
|
作者：
Ryu, H. Y. [1 ]
Ha, K. H. [1 ]
Lee, S. N. [1 ]
Jang, T. [1 ]
Kim, H. K. [1 ]
Son, J. K. [1 ]
Chae, J. H. [1 ]
Kim, K. S. [1 ]
Choi, K. K. [1 ]
Paek, H. S. [1 ]
Sung, Y. J. [1 ]
Sakong, T. [1 ]
Nam, O. H. [1 ]
Park, Y. J. [1 ]
机构：
[1] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 | 2007年 / 4卷 / 01期
关键词：
D O I：
10.1002/pssc.200673529
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report anomalous temperature characteristics of InGaN laser diodes (LDs) emitting around 450 nm. Our blue LD shows negative characteristic temperature in the usual operation temperature range from 20 degrees C to 80 degrees C. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, as deduced from the simulation of carrier density and optical gain. In addition, it is found that wall plug efficiency of the blue LD is even improved as temperature increases. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：70 / 73
页数：4
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