Negative characteristic temperature of InGaN blue multiple-quantum-well laser diodes

被引：0
|
作者：
Ryu, H. Y. [1 ]
Ha, K. H. [1 ]
Lee, S. N. [1 ]
Jang, T. [1 ]
Kim, H. K. [1 ]
Son, J. K. [1 ]
Chae, J. H. [1 ]
Kim, K. S. [1 ]
Choi, K. K. [1 ]
Paek, H. S. [1 ]
Sung, Y. J. [1 ]
Sakong, T. [1 ]
Nam, O. H. [1 ]
Park, Y. J. [1 ]
机构：
[1] Samsung Adv Inst Technol, Display Lab, Suwon 440600, South Korea
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 1 | 2007年 / 4卷 / 01期
关键词：
D O I：
10.1002/pssc.200673529
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report anomalous temperature characteristics of InGaN laser diodes (LDs) emitting around 450 nm. Our blue LD shows negative characteristic temperature in the usual operation temperature range from 20 degrees C to 80 degrees C. This peculiar temperature characteristic is attributed to originate from unique carrier transport properties of InGaN quantum wells with high In composition, as deduced from the simulation of carrier density and optical gain. In addition, it is found that wall plug efficiency of the blue LD is even improved as temperature increases. (c) 2007 WILEYNCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：70 / 73
页数：4
相关论文
共 50 条
  • [11] Characteristics of InGaN multiple quantum well blue-violet laser diodes
    LI Deyao1
    2. Nano-Optoelectronics Laboratory
    Science in China(Series E:Technological Sciences), 2006, (06) : 727 - 732
  • [12] Fabrication of InGaN multiple-quantum-well laser diodes on copper substrates by laser lift-off
    Wong, WS
    Kneissl, M
    Mei, P
    Treat, DW
    Teepe, M
    Johnson, NM
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 883 - 885
  • [13] Continuous-wave operation of ultraviolet InGaN/InAlGaN multiple-quantum-well laser diodes
    Kneissl, M
    Treat, DW
    Teepe, M
    Miyashita, N
    Johnson, NM
    APPLIED PHYSICS LETTERS, 2003, 82 (15) : 2386 - 2388
  • [14] Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer
    JiaXing Wang
    Lai Wang
    Wei Zhao
    Xiang Zou
    Yi Luo
    Science China Technological Sciences, 2010, 53 : 306 - 308
  • [15] Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer
    ina WANG JiaXing WANG Lai ZHAO Wei ZOU Xiang LUO Yi National Laboratory for Information Science and TechnologyState Key Laboratory on Integrated Optoelectronics Department of Electronic Engineering Tsinghua University Beijing China
    中国科学:技术科学, 2010, (02) : 201 - 201
  • [16] Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer
    WANG JiaXing WANG Lai ZHAO Wei ZOU Xiang LUO Yi National Laboratory for Information Science and TechnologyState Key Laboratory on Integrated Optoelectronics Department of Electronic Engineering Tsinghua University Beijing China
    Science China(Technological Sciences), 2010, 53 (02) : 306 - 308
  • [17] Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer
    WANG JiaXing
    Science China(Technological Sciences), 2010, (02) : 306 - 308
  • [18] Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer
    Wang JiaXing
    Wang Lai
    Zhao Wei
    Zou Xiang
    Luo Yi
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (02) : 306 - 308
  • [19] Ultraviolet InAlGaN multiple-quantum-well laser diodes
    Kneissl, M
    Treat, DW
    Teepe, M
    Miyashita, N
    Johnson, NM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2003, 200 (01): : 118 - 121
  • [20] Ultraviolet AlGaN multiple-quantum-well laser diodes
    Kneissl, M
    Treat, DW
    Teepe, M
    Miyashita, N
    Johnson, NM
    APPLIED PHYSICS LETTERS, 2003, 82 (25) : 4441 - 4443
12345