Degradation modes of InGaN blue-violet laser diodes grown on bulk GaN wafers

被引：0

作者：

Kim, Chong Cook ^{[1
]}

Choi, Yoonho ^{[1
]}

Noh, Min-Soo ^{[1
]}

机构：

[1] LD Grp, LG Elect Inst Technol, Seoul 137724, South Korea

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We investigated the degradation modes in the aging processes of (Al, In)GaN laser diodes on bulk GaN substrates of the dislocation density less than 5X10(6) cm(-2). The estimated lifetime exceeds 2,000 h under 160 mW pulse-operation at 60 degrees C. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates.

引用

页码：983 / 984

页数：2

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