Degradation modes of InGaN blue-violet laser diodes grown on bulk GaN wafers

被引：0
|
作者：
Kim, Chong Cook [1 ]
Choi, Yoonho [1 ]
Noh, Min-Soo [1 ]
机构：
[1] LD Grp, LG Elect Inst Technol, Seoul 137724, South Korea
来源：
2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigated the degradation modes in the aging processes of (Al, In)GaN laser diodes on bulk GaN substrates of the dislocation density less than 5X10(6) cm(-2). The estimated lifetime exceeds 2,000 h under 160 mW pulse-operation at 60 degrees C. The lifetime-limiting degradation is attributed to nonradiative recombination related with the defects extended from GaN substrates.
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页码：983 / 984
页数：2
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