Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

被引：0

作者：

Jie Zhao ^{[1
,2
]}

Yanhui Xing ^{[1
]}

Kai Fu ^{[2
]}

Peipei Zhang ^{[3
]}

Liang Song ^{[2
]}

Fu Chen ^{[2
]}

Taotao Yang ^{[1
,2
]}

Xuguang Deng ^{[2
]}

Sen Zhang ^{[4
]}

Baoshun Zhang ^{[2
,5
]}

机构：

[1] Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology

[2] Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS

[3] Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University

来源：

JournalofSemiconductors | 2018年 / 39卷 / 09期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN high electronic mobility transistors; AlGaN back-barrier; breakdown characteristics; leakage current path; Si substrate;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The leakage current and breakdown voltage of Al Ga N/Ga N/Al Ga N high electron mobility transistors on silicon with different Ga N channel thicknesses were investigated.The results showed that a thin Ga N channel was beneficial for obtaining a high breakdown voltage,based on the leakage current path and the acceptor traps in the Al Ga N back-barrier.The breakdown voltage of the device with an 800 nm-thick Ga N channel was 926 V@1 m A/mm,and the leakage current increased slowly between 300 and 800 V.Besides,the raising conduction band edge of the Ga N channel by the Al Ga N back-barrier lead to little degradation for sheet 2-D electron gas density,especially,in the thin Ga N channel.The transfer and output characteristics were not obviously deteriorated for the samples with different Ga N channel thickness.Through optimizing the Ga N channel thickness and designing the Al GaN back-barrier,the lower leakage current and higher breakdown voltage would be possible.

引用

页码：33 / 37

页数：5

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