Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs

被引：0

作者：

Jie Zhao ^{[1
,2
]}

Yanhui Xing ^{[1
]}

Kai Fu ^{[2
]}

Peipei Zhang ^{[3
]}

Liang Song ^{[2
]}

Fu Chen ^{[2
]}

Taotao Yang ^{[1
,2
]}

Xuguang Deng ^{[2
]}

Sen Zhang ^{[4
]}

Baoshun Zhang ^{[2
,5
]}

机构：

[1] Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology

[2] Key Laboratory of Nano Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS

[3] Key Laboratory of RF Circuit and System, Education Ministry, Hangzhou Dianzi University

来源：

JournalofSemiconductors | 2018年 / 39卷 / 09期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN high electronic mobility transistors; AlGaN back-barrier; breakdown characteristics; leakage current path; Si substrate;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

摘要：

The leakage current and breakdown voltage of Al Ga N/Ga N/Al Ga N high electron mobility transistors on silicon with different Ga N channel thicknesses were investigated.The results showed that a thin Ga N channel was beneficial for obtaining a high breakdown voltage,based on the leakage current path and the acceptor traps in the Al Ga N back-barrier.The breakdown voltage of the device with an 800 nm-thick Ga N channel was 926 V@1 m A/mm,and the leakage current increased slowly between 300 and 800 V.Besides,the raising conduction band edge of the Ga N channel by the Al Ga N back-barrier lead to little degradation for sheet 2-D electron gas density,especially,in the thin Ga N channel.The transfer and output characteristics were not obviously deteriorated for the samples with different Ga N channel thickness.Through optimizing the Ga N channel thickness and designing the Al GaN back-barrier,the lower leakage current and higher breakdown voltage would be possible.

引用

页码：33 / 37

页数：5

共 50 条

[21] High-frequency characterization of AlGaN/GaN MIS-HEMTs and HEMTs at cryogenic temperatures
Lin, Chuang-Ju
Chen, Bo-Yuan
Chen, Kun-Ming
Chen, Yu-Ting
Huang, Guo-Wei
Chang, Edward Yi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2025, 64 (02)
[22] The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs
Lu, Bohan
Cui, Miao
Liu, Wen
17TH IEEE INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2019), 2019,
[23] Fabrication of AlGaN/GaN MIS-HEMTs with Post-growth Annealing
Liu, Meihua
Zhang, Yong
Huang, Guoyong
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM, 2023,
[24] AlGaN/GaN MIS-HEMTs with fT of 194 GHz at 16 K
Endoh, A.
Watanabe, I.
Yamashita, Y.
Mimura, T.
Matsui, T.
ELECTRONICS LETTERS, 2008, 44 (04) : 319 - 320
[25] Positive Shift Suppression in Threshold Voltage of AlGaN/GaN MIS-HEMTs
Liu, Meihua
Chang, Kuan-chang
Lin, Xinnan
Li, Lei
Jin, Yufeng
2019 8TH INTERNATIONAL SYMPOSIUM ON NEXT GENERATION ELECTRONICS (ISNE), 2019,
[26] Impact of Interface Treatment on Dynamic Characteristic of AlGaN/GaN MIS-HEMTs
Han J.
Zhao J.-H.
Zhao J.
Xing Y.-H.
Cao X.
Fu K.
Song L.
Deng X.-G.
Zhang B.-S.
Faguang Xuebao/Chinese Journal of Luminescence, 2019, 40 (07): : 915 - 921
[27] Dependence of process damage on GaN channel thickness in AlGaN/GaN high-electron-mobility transistors with back-barrier layers
Ito, Yoshikaze
Tamai, Seita
Hoshi, Takuya
Gotow, Takahiro
Miyamoto, Yasuyuki
JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SC)
[28] Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
Dutta, Gourab
DasGupta, Nandita
DasGupta, Amitava
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (09) : 3602 - 3608
[29] Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs
Kammeugne, R. Kom
Leroux, C.
Frutuoso, T. Mota
Cluzel, J.
Vauche, L.
Le Royer, C.
Gwoziecki, R.
Garros, X.
Gaillard, F.
Charles, M.
Bano, E.
Ghibaudo, G.
IEEE 51ST EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2021), 2021, : 299 - 302
[30] AlGaN/GaN HEMTs with an InGaN back-barrier grown by ammonia-assisted molecular beam epitaxy
Rennesson, S.
Damilano, B.
Vennegues, P.
Chenot, S.
Cordier, Y.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (03): : 480 - 483

← 1 2 3 4 5 →