A novel structure in reducing the on-resistance of a VDMOS

被引：0

作者：

杨永晖 ^{[1
,2
]}

唐昭焕 ^{[1
]}

张正元 ^{[1
,2
]}

刘勇 ^{[1
,2
]}

王志宽 ^{[1
]}

谭开洲 ^{[1
,2
]}

冯志成 ^{[1
]}

机构：

[1] Sichuan Institute of Solid-State Circuits CETC

[2] National Laboratory of Analog ICs

来源：

Journal of Semiconductors | 2011年 / 32卷 / 02期

关键词：

VDMOS; on-resistance; specific on-resistance; breakdown voltage; epitaxial layer resistance;

D O I：

暂无

中图分类号：

TN386.1 [金属-氧化物-半导体（MOS）器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A novel structure of a VDMOS in reducing on-resistance is proposed.With this structure,the specific on-resistance value of the VDMOS is reduced by 22%of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory,and there is only one additional mask in processing the new structure VDMOS,which is easily fabricated.With the TCAD tool,one 200 V N-channel VDMOS with the new structure is analyzed,and simulated results show that a specific on-resistance value will reduce by 23%,and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers.The novel structure can be widely used in the strip-gate VDMOS area.

引用

页码：44 / 47

页数：4

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