OPTIMIZATION OF BREAKDOWN VOLTAGE AND ON-RESISTANCE OF VDMOS TRANSISTORS

被引：19
|
作者：
DARWISH, MN
BOARD, K
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1984年 / 31卷 / 12期
关键词：
D O I：
10.1109/T-ED.1984.21786
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1769 / 1773
页数：5
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