A novel structure in reducing the on-resistance of a VDMOS

被引：0

作者：

杨永晖 ^{[1
,2
]}

唐昭焕 ^{[1
]}

张正元 ^{[1
,2
]}

刘勇 ^{[1
,2
]}

王志宽 ^{[1
]}

谭开洲 ^{[1
,2
]}

冯志成 ^{[1
]}

机构：

[1] Sichuan Institute of Solid-State Circuits CETC

[2] National Laboratory of Analog ICs

来源：

Journal of Semiconductors | 2011年 / 32卷 / 02期

关键词：

VDMOS; on-resistance; specific on-resistance; breakdown voltage; epitaxial layer resistance;

D O I：

暂无

中图分类号：

TN386.1 [金属-氧化物-半导体（MOS）器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A novel structure of a VDMOS in reducing on-resistance is proposed.With this structure,the specific on-resistance value of the VDMOS is reduced by 22%of that of the traditional VDMOS structure as the breakdown voltage maintained the same value in theory,and there is only one additional mask in processing the new structure VDMOS,which is easily fabricated.With the TCAD tool,one 200 V N-channel VDMOS with the new structure is analyzed,and simulated results show that a specific on-resistance value will reduce by 23%,and the value by 33% will be realized when the device is fabricated in three epitaxies and four buried layers.The novel structure can be widely used in the strip-gate VDMOS area.

引用

页码：44 / 47

页数：4

共 50 条

[41] Novel strained superjunction VDMOS
Naugarhiya, Alok
Dubey, Shashank
Kondekar, Pravin N.
[J]. SUPERLATTICES AND MICROSTRUCTURES, 2015, 85 : 461 - 468
[42] A low specific on-resistance SOI LDMOS with a novel junction field plate
Luo Yin-Chun
Luo Xiao-Rong
Hu Gang-Yi
Fan Yuan-Hang
Li Peng-Cheng
Wei Jie
Tan Qiao
Zhang Bo
[J]. CHINESE PHYSICS B, 2014, 23 (07)
[43] A low specific on-resistance SOI LDMOS with a novel junction field plate
罗尹春
罗小蓉
胡刚毅
范远航
李鹏程
魏杰
谭桥
张波
[J]. Chinese Physics B, 2014, (07) : 694 - 698
[44] A Novel Vertical Field Plate Lateral Device With Ultralow Specific On-Resistance
Zhang, Wentong
Zhang, Bo
Qiao, Ming
Wu, Lijuan
Mao, Kun
Li, Zhaoji
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (02) : 518 - 524
[45] Novel Ultralow On-resistance Accumulation-mode LDMOS with Integrated Diodes
Wei, Jie
Ma, Zhen
Li, Congcong
Dai, Kaiwei
Luo, Xiaorong
Zhang, Bo
[J]. 2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
[46] CIRCUIT FOR REDUCING ON-RESISTANCE OF A P-N-P-N DEVICE AT LOW CURRENTS.
Ohno, T.
Inabe, Y.
Sakurai, T.
Izumi, K.
[J]. Electron device letters, 1985, EDL-6 (05): : 241 - 243
[47] Low on-resistance AlGaN/GaN HEMTs by reducing gate length and source-gate length
Ide, T.
Shimizu, M.
Yagi, S.
Inada, M.
Piao, G.
Yano, Y.
Akutsu, N.
Okumura, H.
Arai, K.
[J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06): : 1998 - +
[48] Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars
Guo, Jingwei
Hu, Shengdong
Wang, Jian'an
Guo, Gang
Liu, Chang
Yang, Han
Ran, Shenglong
[J]. RESULTS IN PHYSICS, 2020, 18
[49] A novel terminal structure for total dose irradiation hardened of a P-VDMOS
Tang Zhaohuan
Liu Rongkan
Tan Kaizhou
Luo Jun
Hu Gangyi
Li Ruzhang
Ren Huaping
Wang Bin
[J]. JOURNAL OF SEMICONDUCTORS, 2014, 35 (05)
[50] A novel terminal structure for total dose irradiation hardened of a P-VDMOS
唐昭焕
刘嵘侃
谭开洲
罗俊
胡刚毅
李儒章
任华平
王斌
[J]. Journal of Semiconductors, 2014, (05) : 46 - 49

← 1 2 3 4 5 →