High breakdown voltage InGaAs/InP double heterojunction bipolar transistors with f;=256 GHz and BV;= 8.3 V

被引：1
|
作者：
程伟 [1 ]
赵岩 [1 ]
高汉超 [1 ]
陈辰 [1 ]
杨乃彬 [1 ]
机构：
[1] Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute,Nanjing 210016,China
来源：
半导体学报 | 2012年 / 33卷 / 01期
关键词：
InP; double heterojunction bipolar transistor; planarization;
D O I：
暂无
中图分类号：
TN322.8 [];
学科分类号：
摘要：
An InGaAs/InP DHBT with an InGaAsP composite collector is designed and fabricated using triple mesa structural and planarization technology.All processes are on 3-inch wafers.The DHBT with an emitter area of 1 x 15μm;exhibits a current cutoff frequency f;= 170 GHz and a maximum oscillation frequency f;= 256 GHz.The breakdown voltage is 8.3 V,which is to our knowledge the highest BV;ever reported for InGaAs/InP DHBTs in China with comparable high frequency performances.The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage-controlled oscillator and mixer applications at W band or even higher frequencies.
引用
收藏
页码：56 / 58
页数：3
相关论文
共 50 条
  • [21] Fabrication and characterization of circular geometry InP/InGaAs double heterojunction bipolar transistors
    Loga, R
    Loga, R
    Vilches, A
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (07) : 855 - 858
  • [22] Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation
    Bandyopadhyay, A
    Subramanian, S
    Chandrasekhar, S
    Dentai, AG
    Goodnick, SM
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (05) : 850 - 858
  • [23] Investigation of proton irradiation effects on InP/InGaAs double heterojunction bipolar transistors
    Liu, Min
    Zhang, Yuming
    Lu, Hongliang
    Zhang, Yimen
    Zhang, Jincan
    Ren, Xiaotang
    SOLID-STATE ELECTRONICS, 2015, 109 : 52 - 57
  • [24] InGaP/GaAsSb/InGaAsSb double heterojunction bipolar transistors with 703-GHz fmax and 5.4-V breakdown voltage
    Hoshi, Takuya
    Kashio, Norihide
    Shiratori, Yuta
    Kurishima, Kenji
    Ida, Minoru
    Matsuzaki, Hideaki
    IEICE ELECTRONICS EXPRESS, 2019, 16 (03):
  • [25] NONSTATIONARY 1/F NOISE IN INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    ALERS, GB
    MARTIN, S
    HAMM, RA
    FEYGENSON, A
    YADVISH, RD
    APPLIED PHYSICS LETTERS, 1995, 66 (02) : 198 - 200
  • [26] MICROWAVE-POWER INP/INGAAS/INP DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS
    SONG, JI
    HONG, WP
    BHAT, R
    CHOUGH, KB
    HAYES, JR
    SUGENG, B
    WEI, CJ
    HWANG, JCM
    ELECTRONICS LETTERS, 1993, 29 (08) : 724 - 725
  • [27] Ka-band power performance of InP/InGaAs/InP double heterojunction bipolar transistors
    Chau, HF
    Tserng, HQ
    Beam, EA
    IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1996, 6 (03): : 129 - 131
  • [28] Hot-carrier induced degradation in InP/InGaAs/InP double heterojunction bipolar transistors
    Nanyang Technological Univ, Singapore, Singapore
    Conf Proc Int Conf Indium Phosphide and Relat Mater, (447-450):
  • [29] Analysis and growth of InP/InGaAs/InP double heterojunction bipolar transistors with composite collector by GSMBE
    Qi, Ming
    Sun, Hao
    Xu, Anhuai
    Ai, Likun
    Zhu, Fuying
    2007 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2007, : 165 - 168
  • [30] High f(max) InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE
    Yang, KH
    Munns, GO
    Haddad, I
    IEEE ELECTRON DEVICE LETTERS, 1997, 18 (11) : 553 - 555
12345