Influence of Reaction Pressure on Nucleation Rate of Diamond on Silicon Substrates

被引：0
|
作者：
舒兴胜
邬钦崇
梁荣庆
机构：
来源：
Plasma Science and Technology | 2000年 / 05期
关键词：
<Keywor;
D O I：
暂无
中图分类号：
O539 [等离子体物理的应用];
学科分类号：
070204 ;
摘要：
In our plasma-self-heating MWPCVD apparatus, the influence of reaction pressure on the nucleation rate of diamond on silicon substrates was investigated with CH4/H2 gaseous mixture. It has been found experimentally that the diamond nucleation rate is small at a very low pressure, and increases with a rise in pressure from its low value, then reades its maximum at a moderate pressure, from which on it will contrariwise commence to decrease with a consecutive rise in pressure.
引用
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页码：475 / 479
页数：5
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