Nucleation and growth of CVD diamond films on patterned substrates

被引:21
|
作者
Monteiro, OR [1 ]
Liu, HB
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[2] Gen Nanotechnol, Berkeley, CA 94708 USA
关键词
diamond; nucleation; diamond-like carbon;
D O I
10.1016/S0925-9635(03)00106-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The interest in using CVD diamond in the fabrication of microelectro-mechanical components has steadily increased over the C last few years. Typical technology for manufacturing such components involves the use of molds patterned in silicon or silicon dioxide. which are filled by diamond deposition. The degree of conformality of the CVD film and the characteristics of the diamond-substrate interface becomes critical for the successful fabrication and performance of such devices. We have investigated the growth of CVD diamond films on patterned substrates using a microwave plasma assisted deposition reactor. In particular, the use of seed layers to enhance nucleation on horizontal and vertical walls as well as to promote complete filling of narrow trenches is investigated. Scanning electron microscopy is used to characterize the nucleation and growth of the diamond films. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1357 / 1361
页数:5
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