Monte Carlo simulation based on Geant4 of single event upset induced by heavy ions

被引：0

作者：

GENG Chao ^{[1
,2
]}

LIU Jie ^{[1
]}

ZHANG ZhanGang ^{[1
,2
]}

HOU MingDong ^{[1
]}

SUN YouMei ^{[1
]}

XI Kai ^{[1
,2
]}

GU Song ^{[1
,2
]}

DUAN JingLai ^{[1
]}

YAO HuiJun ^{[1
]}

MO Dan ^{[1
]}

LUO Jie ^{[1
]}

机构：

[1] Institute of Modern Physics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

Science China(Physics,Mechanics & Astronomy) | 2013年 / 06期

基金：

中国国家自然科学基金;

关键词：

SEU occurrence; sensitive volume; critical charge; deposited energy; MUFPSA;

D O I：

暂无

中图分类号：

O571.6 [重离子核物理]; O242.2 [近似计算];

学科分类号：

摘要：

The present work is a computational simulation of single event upset(SEU) induced by heavy ions passing through the device with Geant4-tool based on Monte Carlo transport code.Key parameters affecting SEU occurrence are examined,and related geometrical construction and critical charge are quantified.The MUlti-Functional Package for SEU Analysis(MUFPSA) has been successfully programmed and applied for SEU occurrence after the completion of device geometrical construction,critical charge,and SEU cross section calculation.The proposed MUFPSA has yielded a good agreement with MRED.Specifically,the results show that higher LET incident ions lead to increased SEU vulnerability due to more diffusion and higher energy deposition.In addition,the analytical method of radial ionization profile provides a good complementary interpretation.

引用

页码：1120 / 1125

页数：6

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