共 50 条
- [41] Dislocation motions in Czochralski silicon wafers treated by rapid thermal processing under different atmospheres GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XV, 2014, 205-206 : 238 - +
- [42] Nitrogen-doped Czochralski silicon treated in rapid thermal process MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2006, 134 (2-3): : 193 - 201
- [43] Experimental Investigation of Ultra-Thin Silicon Wafers Warpage 2021 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP 2021), 2021, : 107 - 108
- [44] Thermal stability of oxygen precipitates in nitrogen-doped Czochralski silicon GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY, 2004, 95-96 : 111 - 116
- [45] Simulation Method of Ultra-Thin Silicon Wafers Warpage PROCEEDINGS OF THE NINETEENTH INTERSOCIETY CONFERENCE ON THERMAL AND THERMOMECHANICAL PHENOMENA IN ELECTRONIC SYSTEMS (ITHERM 2020), 2020, : 1134 - 1138
- [47] Intrinsic gettering in nitrogen-doped and hydrogen-annealed Czochralski-grown silicon wafers JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (6A): : 3944 - 3946