Influence of laser conditioning on defects of HfO2 monolayer films

被引：0
|
作者：
李笑 [1 ,2 ]
赵元安 [1 ]
刘晓凤 [1 ,2 ]
邵建达 [1 ]
范正修 [1 ]
机构：
[1] Key Laboratory of High Power Laser Materials,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences
[2] Graduate University of Chinese Academy of Sciences
来源：
Chinese Optics Letters | 2010年 / 8卷 / 06期
关键词：
than;
D O I：
暂无
中图分类号：
O484 [薄膜物理学];
学科分类号：
080501 ; 1406 ;
摘要：
The influence of laser conditioning on defects of HfOmonolayer films prepared by electron beam evaporation (EBE) is investigated utilizing the spot-size effect of the laser-induced damage.It is found that the laser-induced damage threshold of HfOmonolayer films can be increased by a factor of 1.3-1.6.It is also found that the defects with low threshold can be removed by laser conditioning and defects with higher threshold may be removed partially.
引用
收藏
页码：615 / 617
页数：3
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