Scaling carbon nanotube complementary transistors to the 5nm gate length and toward the quantum limit

被引：0

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来源：

Science Foundation in China | 2017年 / 01期

关键词：

CNT; length; Scaling carbon nanotube complementary transistors to the 5nm gate length and toward the quantum limit;

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中图分类号：

TB383.1 []; TN325 [晶体管：按材料分];

学科分类号：

070205 ; 0805 ; 080501 ; 080502 ; 080903 ; 1406 ;

摘要：

Subject Code:F01With the support by the National Natural Science Foundation of China,the research team led by Prof.Peng Lianmao(彭练矛)and Prof.Zhang Zhiyong(张志勇)at the Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics,Peking University,Beijing,recently reported that carbon nanotube CMOS FETs were scaled down to the 5nm gate length and presented performance

引用

页码：41 / 41

页数：1

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