Advanced Process and Electron Device Technology

被引：0

作者：

Dan Zhang ^{[1
,2
]}

Xiaojing Su ^{[1
,2
]}

Hao Chang ^{[1
,2
]}

Hao Xu ^{[1
,2
]}

Xiaolei Wang ^{[1
,2
]}

Xiaobin He ^{[1
,2
]}

Junjie Li ^{[1
,2
]}

Fei Zhao ^{[1
,2
]}

Qide Yao ^{[1
,2
]}

Yanna Luo ^{[1
,2
]}

Xueli Ma ^{[1
,2
]}

Hong Yang ^{[1
,2
]}

Yongliang Li ^{[1
,2
]}

Zhenhua Wu ^{[1
,2
]}

Yajuan Su ^{[1
,2
]}

Tao Yang ^{[1
,2
]}

Yayi Wei ^{[1
,2
]}

Anyan Du ^{[1
,2
]}

Huilong Zhu ^{[1
,2
]}

Junfeng Li ^{[1
,2
]}

Huaxiang Yin ^{[1
,2
]}

Jun Luo ^{[1
,2
]}

Tianchun Ye ^{[1
,2
]}

Wenwu Wang ^{[1
,2
]}

机构：

[1] Institute of Microelectronics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

Tsinghua Science and Technology | 2022年 / 27卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TN40 [一般性问题];

学科分类号：

080903 ; 1401 ;

摘要：

This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors(FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional(3 D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.

引用

页码：534 / 558

页数：25

共 50 条

[1] Advanced process and electron device technology
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Wang, Xiaolei
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