Advanced mesoscopic device concepts and technology

被引：1
|
作者：
Hasegawa, H
机构：
[1] Hokkaido Univ, Res Ctr Interface Quantum Elect, Kita Ku, Sapporo, Hokkaido 0608628, Japan
[2] Hokkaido Univ, Grad Sch Elect & Informat Engn, Kita Ku, Sapporo, Hokkaido 0608628, Japan
来源：
MICROELECTRONIC ENGINEERING | 2000年 / 53卷 / 1-4期
关键词：
D O I：
10.1016/S0167-9317(00)00262-8
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The present status and future prospects of the advanced mesoscopic semiconductor devices are discussed as possible key devices for the next generation electronics. Basic concepts of mesoscopic devices, nanofabrication technology issues and actual examples of mesoscopic devices are presented and discussed.
引用
收藏
页码：29 / 36
页数：8
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