Advanced Process and Electron Device Technology

被引：0

作者：

Dan Zhang ^{[1
,2
]}

Xiaojing Su ^{[1
,2
]}

Hao Chang ^{[1
,2
]}

Hao Xu ^{[1
,2
]}

Xiaolei Wang ^{[1
,2
]}

Xiaobin He ^{[1
,2
]}

Junjie Li ^{[1
,2
]}

Fei Zhao ^{[1
,2
]}

Qide Yao ^{[1
,2
]}

Yanna Luo ^{[1
,2
]}

Xueli Ma ^{[1
,2
]}

Hong Yang ^{[1
,2
]}

Yongliang Li ^{[1
,2
]}

Zhenhua Wu ^{[1
,2
]}

Yajuan Su ^{[1
,2
]}

Tao Yang ^{[1
,2
]}

Yayi Wei ^{[1
,2
]}

Anyan Du ^{[1
,2
]}

Huilong Zhu ^{[1
,2
]}

Junfeng Li ^{[1
,2
]}

Huaxiang Yin ^{[1
,2
]}

Jun Luo ^{[1
,2
]}

Tianchun Ye ^{[1
,2
]}

Wenwu Wang ^{[1
,2
]}

机构：

[1] Institute of Microelectronics,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

Tsinghua Science and Technology | 2022年 / 27卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TN40 [一般性问题];

学科分类号：

080903 ; 1401 ;

摘要：

This article reviews advanced process and electron device technology of integrated circuits, including recent featuring progress and potential solutions for future development. In 5 years, for pushing the performance of fin field-effect transistors(FinFET) to its limitations, several processes and device boosters are provided. Then, the three-dimensional(3 D) integration schemes with alternative materials and device architectures will pave paths for future technology evolution. Finally, it could be concluded that Moore’s law will undoubtedly continue in the next 15 years.

引用

页码：534 / 558

页数：25

共 50 条

[21] Electron energy device for process control
Fuochi, PG
Lavalle, M
Martelli, A
Corda, U
Kovács, A
Hargittai, P
Mehta, K
[J]. RADIATION PHYSICS AND CHEMISTRY, 2003, 67 (3-4) : 593 - 598
[22] Sources of information used in new product and process technology planning within the electron device industry
Vojak, BA
Suarez, CA
[J]. IEMC-2002: IEEE INTERNATIONAL ENGINEERING MANAGEMENT CONFERENCE, VOLS I AND II, PROCEEDINGS: MANAGING TECHNOLOGY FOR THE NEW ECONOMY, 2002, : 623 - 628
[23] ADVANCED PROCESS TECHNOLOGY FOR VLSI CIRCUITS
DOUGLAS, EC
[J]. SOLID STATE TECHNOLOGY, 1981, 24 (05) : 65 - 72
[24] PROCESS-DEVICE SIMULATION TECHNOLOGY FOR LSIS
FUKUMA, M
OKUTO, Y
[J]. DENKI KAGAKU, 1982, 50 (07): : 624 - 629
[25] Virtual Technology for RF Process and Device Development
Vanhoucke, T.
Klaassen, D. B. M.
Mertens, H.
Donkers, J. J. T. M.
Hurkx, G. A. M.
Huizing, H. G. A.
Magnee, P. H. C.
Hijzen, E. A.
van Dalen, R.
Gridelet, E.
Slotboom, J. W.
[J]. 2011 IEEE BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING (BCTM), 2011, : 37 - 44
[26] NEW DEVICE TECHNOLOGY AND THE FDA REVIEW PROCESS
HULSE, JW
[J]. FOOD AND DRUG LAW JOURNAL, 1983, 38 (01): : 1 - 3
[27] DEVICE INTERCONNECTION TECHNOLOGY FOR ADVANCED THERMAL CONDUCTION MODULES
RAY, SK
BECKHAM, KF
MASTER, RN
[J]. IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1992, 15 (04): : 432 - 437
[28] Application for CMP Technology on the Advanced ULSI Device Fabrication/
Suzuki, Keisuke
Nishizawa, Hideaki
[J]. Seimitsu Kogaku Kaishi/Journal of the Japan Society for Precision Engineering, 2022, 88 (08): : 627 - 630
[29] ESD measurement technology for advanced electron devices
Suzuki, K
[J]. NEC RESEARCH & DEVELOPMENT, 2000, 41 (04): : 372 - 376
[30] Electron beam metrology for advanced technology nodes
Lorusso, Gian Francesco
Horiguchi, Naoto
Bömmels, Jürgen
Wilson, Christopher J.
Bosch, Geert Van Den
Kar, Gouri Sankar
Ohashi, Takeyoshi
Sutani, Takumichi
Watanabe, Ryota
Takemasa, Yoshikata
Ikota, Masami
[J]. Japanese Journal of Applied Physics, 2019, 58 (SD)

← 1 2 3 4 5 →