Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering

被引：0
|
作者：
李士娜 [1 ]
马瑞新 [1 ]
马春红 [1 ]
李东冉 [1 ]
肖玉琴 [1 ]
贺良伟 [1 ]
朱鸿民 [1 ]
机构：
[1] Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing
来源：
Optoelectronics Letters | 2013年 / 9卷 / 03期
关键词：
ITO; Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering; RF;
D O I：
暂无
中图分类号：
TN304.055 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Niobium-doped indium tin oxide （ITO:Nb） thin films are prepared on glass substrates with various film thicknesses by radio frequency （RF） magnetron sputtering from one piece of ceramic target material. The effects of thickness （60-360 nm） on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction （XRD）, ultraviolet （UV）-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented （400） direction. The lowest resistivity of the films without any heat treatment is 3.1×10;Ω·cm;, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×10;cm;, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.
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页码：198 / 200
页数：3
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