Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering

被引：0

作者：

李士娜 ^{[1
]}

马瑞新 ^{[1
]}

马春红 ^{[1
]}

李东冉 ^{[1
]}

肖玉琴 ^{[1
]}

贺良伟 ^{[1
]}

朱鸿民 ^{[1
]}

机构：

[1] Department of Non-ferrous Metallurgy, School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing

来源：

Optoelectronics Letters | 2013年 / 9卷 / 03期

关键词：

ITO; Effect of thickness on optoelectrical properties of Nbdoped indium tin oxide thin films deposited by RF magnetron sputtering; RF;

D O I：

暂无

中图分类号：

TN304.055 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Niobium-doped indium tin oxide （ITO:Nb） thin films are prepared on glass substrates with various film thicknesses by radio frequency （RF） magnetron sputtering from one piece of ceramic target material. The effects of thickness （60-360 nm） on the structural, electrical and optical properties of ITO: Nb films are investigated by means of X-ray diffraction （XRD）, ultraviolet （UV）-visible spectroscopy, and electrical measurements. XRD patterns show the highly oriented （400） direction. The lowest resistivity of the films without any heat treatment is 3.1×10;Ω·cm;, and the resistivity decreases with the increase of substrate temperature. The highest Hall mobility and carrier concentration are 17.6 N·S and 1.36×10;cm;, respectively. Band gap energy of the films depends on substrate temperature, which varies from 3.48 eV to 3.62 eV.

引用

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页码：198 / 200

页数：3

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