Characteristics of indium tin oxide films deposited by DC and RF magnetron sputtering

被引：15

作者：

Deng, WL ^{[1
]}

Ohgi, T ^{[1
]}

Nejo, H ^{[1
]}

Fujita, D ^{[1
]}

机构：

[1] Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 5A期

关键词：

indium tin oxide; film; formation; magnetron sputtering;

D O I：

10.1143/JJAP.40.3364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductive and transparent indium tin oxide (ITO) films with a thickness of 100 nm were deposited onto glasses and Si(100) wafers by direct current (DC) and radio frequency (RF) magnetron sputtering. The formation and the annealing effect of films were studied by the measurements of resistivity, optical-transmission, X-ray diffraction and scanning tunneling, microscopy (STM). Experimental studies indicated those films deposited by DC sputtering in a 1% O-2 in an O-2/Ar gas mixture, without annealing, have the lowest resistivity and the highest transmission. In addition, the films deposited by RF sputtering in a 3% O-2 in an O-2/Ar gas mixture, with annealing in air at 300 degreesC for 2 h, have better resistivity and transmission.

引用

页码：3364 / 3369

页数：6

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